IRLR3110Z HEXFET Power MOSFET (Logic Level MOSFET)

Type: N-Channel MOSFET
✅ Drain-to-Source Voltage (Vds): 100 V
✅ Continuous Drain Current: 38 A (at 25°C, Vgs = 10V)
✅ Pulsed Drain Current: up to 160 A
✅ On-Resistance (Rds(on)): 11–14 mΩ (typical at Vgs = 10V, Id = 38A)
✅ Gate Threshold Voltage (Vgs(th)): 1.0–2.5 V (logic level)
✅ Power Dissipation: 110 W (at Tc = 25°C)
✅ Operating Temperature: –55°C to +175°C
✅ Fast Switching: Turn-on delay 24 ns, Rise time 110 ns, Turn-off delay 33 ns, Fall time 48 ns
✅ Package: TO-220AB